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Abstract The phase transitions of two-dimensional (2D) materials are key to the operation of many devices with applications including energy storage and low power electronics. Nanoscale confinement in the form of reduced thickness can modulate the phase transitions of 2D materials both in their thermodynamics and kinetics. Here, using in situ Raman spectroscopy we demonstrate that reducing the thickness of MoS 2 below five layers slows the kinetics of the phase transition from 2H- to 1T′-MoS 2 induced by the electrochemical intercalation of lithium. We observe that the growth rate of 1T′ domains is suppressed in thin MoS 2 supported by SiO 2 , and attribute this growth suppression to increased interfacial effects as the thickness is reduced below 5 nm. The suppressed kinetics can be reversed by placing MoS 2 on a 2D hexagonal boron nitride ( h BN) support, which readily facilitates the release of strain induced by the phase transition. Additionally, we show that the irreversible conversion of intercalated 1T′-MoS 2 into Li 2 S and Mo is also thickness-dependent and the stability of 1T′-MoS 2 is significantly increased below five layers, requiring a much higher applied electrochemical potential to break down 1T′-MoS 2 into Li 2 S and Mo nanoclusters. 

A device for measuring a plurality of material properties is designed to include accurate sensors configured to consecutively obtain thermal conductivity, electrical conductivity, and Seebeck coefficient of a single sample while maintaining a vacuum or inert gas environment. Four major design factors are identified as sample-heat spreader mismatch, radiation losses, parasitic losses, and sample surface temperature variance. The design is analyzed using finite element methods for high temperature ranges up to 1000°C as well as ultra-high temperatures up to 2500°C. A temperature uncertainty of 0.46% was estimated for a sample with cold and hot sides at 905.1 and 908.5°C, respectively. The uncertainty at 1000°C was calculated to be 0.7% for a ?T of 5°C between the hot and cold sides. The thermal conductivity uncertainty was calculated to be -8.6% at ~900°C for a case with radiative gains, and +8.2% at ~1000°C for a case with radiative losses, indicating the sensitivity of the measurement to the temperature of the thermal guard in relation to the heat spreader and sample temperature. Lower limits of -17 and -13% error in thermal conductivity measurements were estimated at the ultra-high temperature of ~2500°C for a single-stage and double-stage radiation shield, respectively. It is noted that this design is not limited to electro-thermal characterization and will enable measurement of ionic conductivity and surface temperatures of energy materials under realistic operating conditions in extreme temperature environments. 

This work describes our discovery of the dominant role of highly charged interfaces on the electrothermal transport properties of PbS, along with a method to reduce the barrier potential for charge carriers by an order of magnitude. High temperature thermoelectrics such as PbS are inevitably exposed to elevated temperatures during postsynthesis treatment as well as operation. However, we observed that as the material was heated, large concentrations of sulfur vacancy (VS̈) sites were formed at temperatures as low as 266 °C. This loss of sulfur doped the PbS n-type and increased the carrier concentration, where these excess electrons were trapped and immobilized at interfacial defect sites in polycrystalline PbS with an abundance of grain boundaries. Sulfur deficient PbS0.81 exhibited a large barrier potential for charge carriers of 0.352 eV, whereas annealing the material under a sulfur-rich environment prevented VS̈ formation and lowered the barrier by an order of magnitude to 0.046 eV. Through ab initio calculations, the formation of VS̈ was found to be more favorable on the surface compared to the bulk of the material with a 1.72 times lower formation energy barrier. These observations underline the importance of controlling interface-vacancy effects in the preparation of bulk materials comprised of nanoscale constituents.